Semiconductor wafer optical scanning system and method using swath-area defect limitation
US6011619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1997 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/95607
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor wafer optical scanning system and method for determining defects on a semiconductor wafer is disclosed. The method for determining wafer defects is based on maximum allowable defects on a swath basis, rather than maximum allowable defects on a wafer basis. The method step include determining the scanned area of an individual swath that is based on a recipe set-up, consistent with the capability of the optical scanning equipment being used and the particular semiconductor wafer being tested for defects. The predetermined swath area is supplied and stored in the optical scanning system along with the maximum allowable defect density determined by the user. By using the predetermined maximum allowable defects for a swath as a limit, defect analysis may be performed on the entire wafer. The optical scanning system would stop acquiring defects for the current swath being analyzed whenever the defect limit is reached, or until the swath defect analysis has been completed. The optical scanning would proceed to the next swath determining its defect and continuing in such a manner until the wafer is completely scanned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.