High throughput electron beam lithography system
US6014200A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1998 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Feb 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam lithography system having a beamlet shaping section that includes a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array with m rows and n columns of apertures having a second shape. Electron beamlets formed by the first multi-aperture array are deflected by a deflector unit before passing through the second multi-aperture array. The superposition of the electron beamlets on the second multi-aperture produces electron beamlets having a selected shape. Deflection logic on an active beam aperture array blank selected electron beamlets. The deflection logic can be updated with the next logic pattern as the current logic pattern is being executed. The unblanked electron beamlets are directed onto a surface to be exposed. The deflection logic on the active beam aperture array, and the multi-aperture arrays, are shielded from electrons and x-rays generated by the electrons striking surfaces within the electron beam lithography system. Sensitive deflection logic is radiation hardened to prevent degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.