Field emission display cathode assembly government rights
US6015323A · kind A · utility
18Cited by
15References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Jan 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.