Elevated pin diode active pixel sensor including a unique interconnection structure
US6018187A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Oct 19, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. Each photo sensor includes an individual pixel electrode. An I-layer is formed over all of the pixel electrodes. A transparent electrode is formed over the I-layer. An inner surface of the transparent electrode is electrically connected to the I-layer and the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.