Channel dopant implantation with automatic compensation for variations in critical dimension

US6020244A · kind A · utility

Assignee

• Intel Corporation · US

Inventors

• Scott Thompson · Portland, US
• Paul Packan · Beaverton, US
• Tahir Ghani · Portland, US
• Mark Stettler · Hillsboro, US
• Shahriar Ahmed · Portland, US
• Mark Bohr · Beaverton, US

Key dates

• Filing date: Dec 30, 1996
• Grant date: Feb 1, 2000
• Expiry date: Dec 30, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/371
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An improved well boosting implant which provides better characteristics than traditional halo implants particularly for short channel devices (e.g., 0.25 microns or less). In effect, an implant is distributed across the entire channel with higher concentrations occurring in the center of the channel of the devices having gate lengths less than the critical dimension. This is done by using very large tilt angles (e.g., 30-50.degree.) with a relatively light dopant species and by using a relatively high energy when compared to the traditional halo implants.