Mark Stettler
5Patents
3h-index
22Co-inventors
49Inventor score
Filing activity: Dec 30, 1996 → Mar 11, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7226843B2 | Indium-boron dual halo MOSFET | Electricity | 128 | Expired |
| US6020244A | Channel dopant implantation with automatic compensation for variations in critical dimension | Electricity | 47 | Expired |
| US7470972B2 | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6867104B2 | Method to form a structure to decrease area capacitance within a buried insulator device | Electricity | 1 | Expired |
| US7091560B2 | Method and structure to decrease area capacitance within a buried insulator device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.