Spin dependent tunneling memory
US6021065A · kind A · utility
46Cited by
13References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 6, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Nov 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.