Copper interconnect methodology for enhanced electromigration resistance
US6022808A · kind A · utility
74Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper interconnects with enhanced electromigration are formed by filling a via/contact hole and/or trench in a dielectric layer with undoped Cu. A Cu layer containing a dopant element, such as Pd, Zr or Sn is deposited on the undoped Cu contact/via and/or line. Annealing is then conducted to diffuse the dopant element into the copper contact/via and/or line to improve its electromigration resistance. CMP is then performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.