Dual frequency excitation of plasma for film deposition
US6024044A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/517
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C. to deposit a smooth thin film onto the transparent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.