Method of forming a pattern using polysilane
US6025117A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Dec 8, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.