Center gas feed apparatus for a high density plasma reactor
US6027606A · kind A · utility
12Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.