Method and apparatus for plasma processing apparatus
US6034346A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1996 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled plasma processing apparatus has a loop antenna for passing a high-frequency wave, a cavity resonator for surrounding the loop antenna, and a slit in double-layer structure in a position where the cavity resonator faces a plasma. The plasma on the surface of a wafer can be processed uniformly with various desirable effects including: (1) preventing foreign matter from being produced and abnormal discharge because of electrostatic coupling; (2) improving the ignitability and stability of a plasma; (3) lowering the antenna voltage; and (4) effecting uniform processing by providing an opposed grounding electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.