Method for forming air gaps for advanced interconnect systems
US6037249A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming air gaps in an interconnect system is disclosed. At least two conductive lines are formed upon a substrate. A low-dielectric constant material (LDCM) is formed between the at least two conductive lines. Formation of the LDCM creates first and second adhesive forces between the LDCM and the at least two conductive lines and between the LDCM and the substrate, respectively. The LDCM is expanded. A dielectric layer is formed onto the LDCM and the at least two conductive lines. Formation of the dielectric layer creates a third adhesive force between the LDCM and the dielectric layer. The LDCM is contracted. Contraction of the LDCM resulting from a fourth force within the LDCM. Each of the first, second, and third adhesive forces are substantially stronger than the fourth force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.