Method of titanium nitride contact plug formation
US6037252A · kind A · utility
19Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Nov 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a via less than about 0.16 .mu.m in diameter in an oxide layer of a substrate with a TiN plug deposited by CVD and capping the plug with TiN only. In one embodiment, a first layer of TiN is deposited on a substrate by thermal CVD, and a second layer of TiN is deposited on the first layer by PECVD. Alternatively, a one-step process is used to deposit a TiN layer using either thermal CVD or PECVD. The method eliminates a tungsten layer, and thus eliminates a processing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.