Semiconductor device including antireflective etch stop layer
US6040619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1997 |
| Grant date | Mar 21, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.