Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6042994A · kind A · utility
45Cited by
4References
28Claims
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Key dates
| Filing date | Jan 8, 1999 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jan 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.