Method of prevention of degradation of low dielectric constant gap-fill material
US6043147A · kind A · utility
8Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.