Method for quantifying ultra-thin dielectric reliability: time dependent dielectric wear-out
US6047243A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1997 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/129
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ultra-thin dielectric film is subject to a dynamic electrical bias. During a first phase, the ultra-thin dielectric film is under a high field bias generated by the application of a high voltage. The duration of the high electrical stress is dependent on the intrinsic properties of the ultra-thin dielectric material. In a second phase, the ultra-thin dielectric film is subjected to an operating field bias generated by the application of an operating voltage. The change in the field bias exposes the dielectric to a similar dynamic stress that microelectronic devices ordinarily experience. At the operating field stage, a gate current is measured and compared to a predetermined range. Once the gate current exceeds that range the test concludes. Otherwise, the test cycles between the above-mentioned phases for a predetermined number of iterations based on prior experimental correlation. In a destructive testing mode, the process is continuous and does not conclude until the gate current exceeds a predetermined range. The ultra-thin dielectric gate current may also be measured as the ultra-thin dielectric is heated so that the transport properties or reliability of the ultra-thin die…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.