Chamber monitoring and adjustment by plasma RF metrology
US6051284A · kind A · utility
27Cited by
9References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 1996 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | May 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for monitoring a parameter of the RF power applied to a plasma-enhanced chemical vapor deposition (PECVD) chamber. The parameter is used to monitor an aspect of the chamber or a process in the chamber. In particular, the parameter can be used to determine whether the susceptor is properly aligned, determine the spacing of the susceptor from the gas discharge head, determine whether the wafer is properly aligned on the susceptor, determine whether there has been any deterioration of the susceptor or the gas discharge head, and determine whether a chamber clean operation is complete.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.