Fabrication of raised source-drain transistor devices
US6051473A · kind A · utility
30Cited by
15References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1996 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Nov 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process in accordance with the invention enables the manufacturability of raised source-drain MOSFETs. In accordance with the invention, a raised source-drain material, having a window therein, is formed over the substrate. A gate oxide and window sidewall oxides are subsequently formed. Dopants are diffused into the substrate. A gate is formed within the window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.