Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode
US6051487A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed by forming a sacrificial plug over a substrate and forming active regions in the substrate adjacent the sacrificial plug. A film is then formed over portions of the substrate adjacent the sacrificial plug. The sacrificial plug is then selectively removed leaving an opening in the film, and a gate electrode is formed in the opening. The sacrificial plug can be formed from several materials including, for example, polysilicon and nitrogen-bearing species such as nitride. The gate electrode may, for example, be formed from temperature-sensitive metals such as copper since the gate electrode may be formed subsequent to high temperature steps of the fabrication, such as a source drain anneal, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.