Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6055927A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1997 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Jan 14, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.