Low temperature reflow dielectric-fluorinated BPSG

US6057250A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Sienens Aktiengesellschaft · DE
• Lam Research Corporation · US

Inventors

• Markus Kirchhoff · Radeberg, DE
• Ashima B. Chakravarti · Hopewell Junction, US
• Matthias Ilg · Fishkill, US
• Kevin A. McKinley · Fremont, US
• Son V. Nguyen · Irvine, US
• Michael J. Shapiro · Austin, US

Key dates

• Filing date: Jan 27, 1998
• Grant date: May 2, 2000
• Expiry date: Jan 27, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. It is a preferred method of the invention to perform the deposition at a temperature of about 750-850.degree. C. and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface. A F-BPSG glass and semiconductor wafers having a layer of fluorine doped BPSG thereon formed by the method and apparatus of the invention are also provided.