Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same
US6060396A · kind A · utility
7Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor silicon wafer polishing agent and a polishing method using the same are provided for avoiding the need for an increased purity of a polishing agent which may cause a prohibitively high cost, while still preventing semiconductor wafers from being contaminated by metals, particularly by copper and nickel, in a polishing process. The semiconductor silicon wafer polishing agent comprises a silica containing polishing agent as a main component, and Cu and Ni respectively in concentration of 0.01 to 1 ppb with respect to the total amount of the polishing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.