End-of-range damage suppression for ultra-shallow junction formation
US6074937A · kind A · utility
15Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Apr 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lightly doped regions are implanted into an amorphous region in the semiconductor substrate to significantly reduce transient enhanced diffusion upon subsequent activation annealing. A sub-surface non-amorphous region is also formed before activation annealing to substantially eliminate end-of-range defects on crystallization of amorphous region containing the lightly doped implants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.