Trench-gated Schottky diode with integral clamping diode
US6078090A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Apr 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A trench-gated Schottky diode of the kind described in U.S. Pat. No. 5,365,102 is provided with an integral clamping diode which protects the gate oxide from damage from high electric fields and hot carrier generation when the device is reverse-biased. The clamping diode is arranged in parallel with the normal current path through the Schottky diode and comprises a PN junction created by a diffusion of opposite conductivity to the semiconductor material of the Schottky diode. In a preferred embodiment, the clamping diode is selected to prevent significant impact ionization near the trenched gate during either steady state- or deep depletion-induced avalanche breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.