Chamber for reducing contamination during chemical vapor deposition
US6079353A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Mar 28, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45563
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount of thin film, and the quality of the film which can be deposited without requiring the system to be shut down. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.