Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dry etch
US6086777A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jul 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention relates to a method of etching tantalum disposed over a dielectric layer, involving etching at least a portion of the tantalum using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen at a temperature from about 100.degree. C. to about 150.degree. C. under a pressure from about 1 torr to about 1.5 torr. In another embodiment, the present invention relates to a method of etching at least a portion of a tantalum barrier layer, the tantalum barrier layer at least partially surrounding a copper or copper alloy interconnect, involving etching at least a portion of the tantalum barrier layer using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.