Jerry Cheng
28Patents
10h-index
33Co-inventors
75Inventor score
Filing activity: Jun 4, 1998 → May 7, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6235628A | Method of forming dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide middle etch stop layer | Electricity | 35 | Expired |
| US6472317B1 | Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers | Electricity | 24 | Expired |
| US6153514A | Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer | Electricity | 20 | Expired |
| US6291887A | Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer | Electricity | 20 | Expired |
| US6086777A | Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dry etch | Electricity | 17 | Expired |
| US8060510B2 | Best fit map searching | Emerging Cross-Sectional Technologies | 15 | Active |
| US6207577A | Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer | Electricity | 15 | Expired |
| US6207576A | Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide etch stop layer | Electricity | 12 | Expired |
| USD434595S | Electric ice-scraping machine | General | 11 | Expired |
| US6255735A | Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layers | Electricity | 10 | Expired |
| US10942625B1 | Coordinated display of software application interfaces | Physics | 8 | Active |
| US8862610B2 | Method and system for content search | Physics | 7 | Active |
| US6107208A | Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry | Electricity | 7 | Expired |
| US6380091B1 | Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layer | Electricity | 5 | Expired |
| US6649525B1 | Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process | Electricity | 3 | Expired |
| US11025742B2 | Dynamic link processing engine | Electricity | 3 | Active |
| US6756300B1 | Method for forming dual damascene interconnect structure | Electricity | 2 | Expired |
| US10719600B1 | Application authenticity verification in digital distribution systems | Electricity | 2 | Active |
| US6759179B1 | Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process | Electricity | 1 | Expired |
| US11768930B2 | Application authenticity verification in digital distribution systems | Electricity | 1 | Active |
| US11003757B1 | Application authenticity verification in digital distribution systems | Electricity | 0 | Active |
| US10977060B2 | Native execution bridge for sandboxed scripting languages | Physics | 0 | Active |
| US11729295B2 | Dynamic link processing engine | Electricity | 0 | Active |
| US11231921B2 | Software application update management engine | Physics | 0 | Active |
| US10394584B2 | Native execution bridge for sandboxed scripting languages | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.