Non-volatile multistate memory cell using a ferroelectric gate fet
US6091621A · kind A · utility
23Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | Dec 5, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Dec 5, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-state non-volatile ferroelectric memory includes a field effect transistor having a gate insulator formed of ferroelectric material. The ferroelectric material is separated into regions of different characteristics, e.g. different thicknesses, different coercive field values, etc., so as to provide a plurality of different threshold voltages for the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.