Formation of junctions by diffusion from a doped film into and through a silicide during silicidation
US6096599A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Nov 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/923
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High integrity shallow source/drain junctions are formed employing cobalt silicide contacts. Embodiments include depositing a layer of cobalt on a substrate above intended source/drain regions, depositing a cap layer of titanium or titanium nitride on the cobalt, depositing a doped film on the cap layer, and performing silicidation, as by rapid thermal annealing, to form a low-resistivity cobalt silicide and to diffuse impurities from the doped film through the cobalt silicide into the substrate to form a junction extending into the substrate a constant depth below the cobalt silicide interface. The formation of source/drain junctions self-aligned to the cobalt silicide/silicon interface prevents junction leakage while allowing the formation of cobalt silicide contacts at optimum thickness, thereby facilitating reliable device scaling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.