Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
US6099649A · kind A · utility
417Cited by
9References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.