Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6101971A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Dec 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32972
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.