Schottky diode of SiC and a method for production thereof

US6104043A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Willy Hermansson · Hagfors, SE
• Bo Bijlenga · Skultuna, SE
• Lennart Ramberg · Bromma, SE
• Kurt Rottner · Sollentuna, SE
• Lennart Zdansky
• Christopher Harris · Sollentuna, SE
• Mietek Bakowski · Gately Drive, SE
• Adolf Schöner · Hässelby, SE
• Nils Magnus Lundberg · Höllviken, SE
• Mikael Östling
• Fanny Dahlquist · Stockholm, SE

Key dates

• Filing date: Feb 20, 1997
• Grant date: Aug 15, 2000
• Expiry date: Feb 20, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.