Method of fabricating self-aligned contact
US6107175A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Feb 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28525
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of a method of fabricating a contact. A substrate having a plurality of gates and a plurality of lightly doped source/drain regions is provided. A dielectric layer is formed and patterned to form a self-align contact window to expose a first lightly doped source/drain region of said lightly doped source/drain regions, and to form a first spacer on a side wall of a first gate of said gates simultaneously. An ion implantation is performed by using the first spacer as a mask, so that a first heavily doped source/drain region is formed in the first lightly doped source/drain region. A doped poly-silicon layer is formed over the substrate, and a metal silicide layer is formed on the doped poly-silicon layer. The doped poly-silicon and the metal silicide layer are patterned to form a self-align contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.