Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry
US6107208A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention relates to a method of etching silicon nitride disposed over a copper containing layer by etching at least a portion of the silicon nitride using a nitride etch gas mixture comprising from about 5 sccm to about 15 sccm of CHF.sub.3, about 5 sccm to about 15 sccm of nitrogen and about 80 sccm to about 120 sccm of a carrier gas. In another embodiment, the present invention relates to a method of processing a semiconductor substrate comprising silicon nitride disposed over a copper containing layer, involving etching at least a portion of the silicon nitride using a nitride etch gas mixture comprising CHF.sub.3, nitrogen and Ar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.