Method for fabricating semiconductor components using focused laser beam
US6114240A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1999 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor components, such as packages, interconnects and test carriers, is provided. The method includes laser machining conductive vias for interconnecting contacts on the component, using a laser beam that is focused to produce a desired via geometry. The vias can include enlarged end portions to facilitate deposition of a conductive material during formation of the vias, and to provide an increased surface area for forming the contacts. For example, by focusing the laser beam at a midpoint of a substrate of the component, an hour glass via geometry is provided. Alternately, the laser beam can be focused at an exit point, or at an entry point of the substrate, to provide converging or diverging via geometries. The method can also include forming contact pins on the conductive vias by bonding and shaping metal wires using a wire bonding process, or a welding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.