Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode

US6114739A · kind A · utility

Assignee

• AGILENT TECHNOLOGIES, INC. · US

Inventors

• Jeremy Alfred Theil · Mountain View, US
• Min Cao · Hsinchu, TW
• Dietrich W. Vook · Los Altos, US
• Frederick Perner · Palo Alto, US
• Xin Sun · Shenyang, CN
• Shawming Ma · Sunnyvale, US
• Gary W. Ray · Mountain View, US
• Wayne M. Greene · Los Gatos, US
• Kit M. Cham · Cupertino, US
• Steven A. Lupi · Gilroy, US

Key dates

• Filing date: Oct 19, 1998
• Grant date: Sep 5, 2000
• Expiry date: Oct 19, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/933

Abstract

An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.