Trench isolation process using nitrogen preconditioning to reduce crystal defects
US6118168A · kind A · utility
19Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subject to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.