Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer
US6120844A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1996 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Mar 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer thereover to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by either vapor deposition or chemical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. In another aspect of the invention, a thin, self-aligning layer is formed over a barrier layer prior to deposition of a conducting film thereover. It is believed that the self-aligning layer enhances the reflectivity of the films by improving the crystal structure in the resulting film and provides improved electromigration performance by providing <111> crystal orientation. The process is preferably carried out in …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.