Method of forming a void free copper interconnects
US6121141A · kind A · utility
25Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1998 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Void free Cu or Cu alloy interconnects are formed by annealing at superatmospheric pressure after metallization. Embodiments include filling a damascene opening in a dielectric layer with Cu or a Cu alloy and heat treating in a chamber at a pressure of about 2 atmospheres to about 750 atmospheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.