Imran Hashim
108Patents
18h-index
68Co-inventors
89Inventor score
Filing activity: Feb 6, 1997 → Jan 11, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6066892A | Copper alloy seed layer for copper metallization in an integrated circuit | Electricity | 107 | Expired |
| US6287977A | Method and apparatus for forming improved metal interconnects | Electricity | 93 | Expired |
| US6037257A | Sputter deposition and annealing of copper alloy metallization | Electricity | 84 | Expired |
| US6436267B1 | Method for achieving copper fill of high aspect ratio interconnect features | Electricity | 52 | Expired |
| US6387805B2 | Copper alloy seed layer for copper metallization | Electricity | 44 | Expired |
| US6559061B2 | Method and apparatus for forming improved metal interconnects | Electricity | 40 | Expired |
| US6500762B2 | Method of depositing a copper seed layer which promotes improved feature surface coverage | Electricity | 39 | Expired |
| US6160315A | Copper alloy via structure | Electricity | 38 | Expired |
| US6709987B2 | Method and apparatus for forming improved metal interconnects | Electricity | 34 | Expired |
| US6184137A | Structure and method for improving low temperature copper reflow in semiconductor features | Electricity | 31 | Expired |
| US6174811A | Integrated deposition process for copper metallization | Electricity | 27 | Expired |
| US6992012B2 | Method and apparatus for forming improved metal interconnects | Electricity | 27 | Expired |
| US8569104B2 | Transition metal oxide bilayers | Electricity | 25 | Active |
| US6121141A | Method of forming a void free copper interconnects | Electricity | 25 | Expired |
| US6149776A | Copper sputtering target | Chemistry; Metallurgy | 23 | Expired |
| US8686389B1 | Diffusion barrier layer for resistive random access memory cells | Electricity | 22 | Active |
| US8343813B2 | Resistive-switching memory elements having improved switching characteristics | Electricity | 21 | Active |
| US6566259B1 | Integrated deposition process for copper metallization | Electricity | 19 | Expired |
| US6217715A | Coating of vacuum chambers to reduce pump down time and base pressure | Electricity | 18 | Expired |
| US8766234B1 | Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks | Electricity | 17 | Active |
| US6391776B1 | Method of depositing a copper seed layer which promotes improved feature surface coverage | Electricity | 16 | Expired |
| US9001554B2 | Resistive random access memory cell having three or more resistive states | Physics | 16 | Active |
| US7824935B2 | Methods of combinatorial processing for screening multiple samples on a semiconductor substrate | Electricity | 15 | Active |
| US8288297B1 | Atomic layer deposition of metal oxide materials for memory applications | Electricity | 13 | Active |
| US8866121B2 | Current-limiting layer and a current-reducing layer in a memory device | Physics | 10 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.