Electromigration-resistant copper microstructure and process of making
US6123825A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | Dec 2, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.