Method for forming conformal barrier layers
US6124203A · kind A · utility
87Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming barrier layers in a channel or via opening by using a plasma etching technique to etch back the barrier layer which reduces the electrical resistance of the barrier layer, maintains its barrier effectiveness and enhances the subsequent filling of the channel or via opening by conductive materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.