Method and system for adjusting semiconductor processing equipment
US6126744A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1997 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Aug 15, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to prepare thermal reactors for operation after installation, modification, upgrade and routine preventive maintenance operations. Variations in reaction rate across a wafer surface are used to determine corresponding variations in surface temperature across the wafer surface. Surface temperature variations results in thickness variations of a chemically deposited layer. For selected thicknesses, a chemically deposited layer is transparent and exhibits color variations corresponding to the thickness variations that result from the surface temperature variations. These color variations are then correlated to surface temperature variations to enable wafer heating adjustments to reduce surface temperature variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.