Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by adjustment of PH of deionized water
US6130163A · kind A · utility
8Cited by
4References
3Claims
0Family size
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Inventors
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B57/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of reducing agglomerated particles in a slurry for use in a chemical mechanical polishing (CMP) machine, the CMP machine also using deionized water, is disclosed. The method comprises the steps of: monitoring the pH of the slurry that is provided to the CMP machine; monitoring the pH of the deionized water that is provided to the CMP machine; and adjusting the pH of the deionized water to be substantially the same as the pH of the slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.