Amorphously deposited metal oxide ceramic films
US6133051A · kind A · utility
19Cited by
28References
62Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.