Metal line deposition process

US6136709A · kind A · utility

Assignees

• Infineon Technologies North America Corp. · US
• International Business Machines Corporation · US

Inventors

• Sven Schmidbauer · Dresden, DE
• Stefan Weber · Fishkill, US
• Peter Weigand · Unterhaching, DE
• Larry Clevenger · Lagrangeville, US
• Roy Iggulden · Newburgh, US

Key dates

• Filing date: Oct 6, 1999
• Grant date: Oct 24, 2000
• Expiry date: Oct 6, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the steps of providing a semiconductor wafer including a dielectric layer formed on the wafer, the dielectric layer having vias formed therein and placing the wafer in a deposition chamber. The method further includes depositing a metal on the wafer to fill the vias wherein the metal depositing is initiated when the wafer is at a first temperature and the depositing is continued while heating the wafer to a target temperature which is greater than the first temperature.