Seasoning process for etcher
US6139702A · kind A · utility
6Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A seasoning process for an etcher which is performed before etching a dielectric layer to expose a metal silicide layer. The seasoning process includes the first plasma sputtering process and the second plasma sputtering process. A wafer containing the metal silicide layer thereon is placed in the etcher with an etchant and the first plasma sputtering process is performed. Several silicon wafers are successively placed in the etcher to perform the second plasma sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.