Chemically removable Cu CMP slurry abrasive
US6140239A · kind A · utility
24Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Abrasion of Cu metallization during CMP is reduced and residual slurry particulate removal facilitated by employing a CMP slurry containing a dispersion of iron oxide particles having high solubility in dilute acids. Embodiments include CMP Cu metallization with a slurry containing iron oxide particles and removing residual iron oxide particles after CMP with an organic acid, such as oxalic acid or acetic acid, or a dilute inorganic acid, such as hydrochloric, boric or fluoroboric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.